Control of Al<sub>2</sub>O<sub>3</sub>/Ge Interface Structure Based on Mechanism of Interface Reaction

Shigehisa Shibayama

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17p-B5-1~21] 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

5:30 PM - 5:45 PM

[17p-B5-18] Control of Al₂O₃/Ge Interface Structure Based on Mechanism of Interface Reaction

^○Shigehisa Shibayama^1,2, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Naogya Univ.¹, JSPS Research Fellow²)

Keywords:Al2O3/Ge,熱酸化,界面反応

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Presentation information

[17p-B5-1~21] 13.3 Insulator technology

[17p-B5-18] Control of Al2O3/Ge Interface Structure Based on Mechanism of Interface Reaction

[17p-B5-18] Control of Al₂O₃/Ge Interface Structure Based on Mechanism of Interface Reaction