[17p-B5-1~21] 13.3 Insulator technology

[17p-B5-3] Dipole Layer Formation at Al₂O₃/SiO₂ Interface Reproduced by Molecular Dynamics Simulation

^○Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

Keywords:分子動力学,ダイポール,シミュレーション