The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.5 Compound solar cells

[17p-D6-1~18] 14.5 Compound solar cells

Tue. Sep 17, 2013 2:00 PM - 7:00 PM D6 (MK 3F-301)

3:45 PM - 4:00 PM

[17p-D6-7] Effects of MOVPE InGaN growth on solar cell properties of p-on-n structure Si substrate

Akihiro Mihara1,2, Naoteru Shigekawa3, ○Akio Yamamoto1,2 (Univ. of Fukui1, JST-CREST2, Osaka City Univ.3)

Keywords:InGaN/Si構造,タンデム太陽電池