[17p-P2-1~49] 8 Plasma Electronics

[17p-P2-47] Formation of Polycrystalline Si Films for Thin-film Transistors by Selective Heating Method of Transition Metal with Hydrogen Radical Irradiation

^○Hiroki Nakaie¹, Tetsuji Arai¹, Keisuke Arimoto¹, Junji Yamanaka¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Kentarou Sawano³, Yasuhiro Shiraki³ (Univ. of Yamanashi¹, SST Inc.², Tokyo City Univ.³)

Keywords:選択加熱現象,多結晶Si形成,水素ラジカル