[17p-P8-1~7] 15.5 IV-group crystals and IV-IV-group mixed crystals

[17p-P8-4] Formation of high quality compressive SiGe layers grown on Si(110) substrates and characterization of electron mobility

^○Kensuke Ido¹, Tomoyuki Obata¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kentaro Sawano², Yasuhiro Shiraki² (CCST Univ.¹, ARL Tokyo City Univ²)

Keywords:SiGe,歪み,移動度