[17p-P9-1~2] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[17p-P9-1] Subsidiary effect of double pulse laser annealing to reduce the dislocation density of GaN substrates

^○Mariko Fujieda¹, Takamasa Ishii¹, Shinichi Anzai¹, Takeaki Sakurai¹, Takashi Sekiguchi², Katsuhiro Akimoto¹ (Univ. of Tsukuba¹, NIMS²)

Keywords:GaN,転位,カソードルミネッセンス