Threading dislocation conversion and step structure during SiC solution growth

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 18, 2013 9:00 AM - 11:30 AM B3 (TC2 1F-105)

9:15 AM - 9:30 AM

^○Shunta Harada¹, Yuji Yamamoto¹, Shiyu Xiao¹, Atsushi Horio¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

Keywords:SiC,dislocation,step structure