The 74th JSAP Autumn Meeting,2013

Presentation information

Print

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[18a-B4-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Sep 18, 2013 9:15 AM - 12:00 PM B4 (TC2 1F-106)

11:45 AM - 12:00 PM

[18a-B4-10] Formation of uniaxially strained SiGe with high Ge concentrations by selective ion implantation

○Eisuke Yonekura1, Yutaro Shoji1, Kiyokazu Nakagawa2, Yasuhiro Shiraki1, Kentarou Sawano1 (Tokyo City Univ.1, Yamanashi Univ.2)

Keywords:半導体