The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

08. Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[18a-C1-1~5] 8.3 Plasma deposition of thin film and surface treatment

Wed. Sep 18, 2013 9:00 AM - 10:15 AM C1 (TC3 1F-101)

9:30 AM - 9:45 AM

[18a-C1-3] Effect of gas flow rate on crystalline structures and radical density of amorphous carbon films grown by radical-injection plasma-enhanced chemical vapor deposition

Da Xu1, Lingyun Jia1, Masayuki Nakamura1, Hiroki Kondo1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (Nagoya University1)

Keywords:amorphous carbon films,PECVD