The 74th JSAP Autumn Meeting,2013

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Oral presentation

10. Spintronics and Magnetics » 10.1 Creation of new materials

[18a-C15-1~10] 10.1 Creation of new materials

Wed. Sep 18, 2013 9:00 AM - 11:45 AM C15 (TC3 2F-216)

9:30 AM - 9:45 AM

▼ [18a-C15-3] Magnetoresistance effect of perpendicularly magnetized tunnel junctions using Heusler type Mn-Co-Ga electrode

○Takahide Kubota1, Shigemi Mizukami1, Hiroshi Naganuma2, Mikihiko Oogane2, Yasuo Ando2, Terunobu Miyazaki1 (WPI-AIMR, Tohoku Univ.1, Grad. Sch. Eng., Tohoku Univ.2)

Keywords:Heusler合金,垂直磁化薄膜,トンネル磁気抵抗効果