The 74th JSAP Autumn Meeting,2013

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Oral presentation

08. Plasma Electronics » 8.4 Plasma etching

[18a-C2-1~8] 8.4 Plasma etching

Wed. Sep 18, 2013 9:30 AM - 11:45 AM C2 (TC3 1F-102)

10:15 AM - 10:30 AM

▲ [18a-C2-4] Si chemical dry etching in NOx (x=1 or 2) / F2 gas mixture at an elevated temperature (II)

○Satomi Tajima1, Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (Nagoya Univ.1)

Keywords:Si chemical dry etching,Surface chemical reaction,Molecular orbital