[18a-C7-1~10] 6.4 薄膜新材料

[18a-C7-2] Epitaxial Growth of Aluminum Nitride Thin Film on Sapphire Substrate by ECR Plasma Method

^○Satoru Kaneko¹, Hironori Torii², Takao Amazawa², Masahito Kurouchi¹, Takeshi Ito¹, Manabu Yasui¹, Akinori Fukushima³, Takashi Tokumasu³, Akifumi Matsuda (Kanagawa Ind. Tech. Center¹, MES-AFTY², Tohoku Univ.³, Tokyo Inst. Tech.⁴, Busan University⁵)

キーワード：窒化アルミ,エピタキシャル成長