The 74th JSAP Autumn Meeting,2013

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Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[18a-D3-1~11] 6.3 Oxide-based electronics

Wed. Sep 18, 2013 9:30 AM - 12:30 PM D3 (MK 2F-201)

10:00 AM - 10:15 AM

△ [18a-D3-3] Memory characteristics of highly drift resistant tiny ReRAM cell constructed between AFM cantilever and bottom electrode substrate

○Sang-Gyu Koh1, Yusuke Sawai1, Satoru Kishida1,2, Kentaro Kinoshita1,2 (Tottori Univ.1, Tottori Univ. Electronic Display Research Center2)

Keywords:ReRAM,NiO,AFM