[18a-D3-1~11] 6.3 Oxide-based electronics

△ [18a-D3-7] Elucidation of Microscopic Switching Mechanism in Conducting-Bridge Memory Using Ab Initio Calculation

^○Sho Yura¹, Takahiro Yamasaki³, Kengo Nakada¹, Akira Isii¹, Satoru Kisida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center², NIMS³)

Keywords:第一原理計算,酸化ハフニウム,抵抗変化メモリ