[18a-D3-1~11] 6.3 Oxide-based electronics

△ [18a-D3-9] Acquirement of Physical Property of Filament in Filament-Type Resistive Memories

^○Takumi Moriyama¹, Ryosuke Koishi¹, Kouhei Kimura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Keywords:ReRAM,導電性フィラメント