Formation of AlN thin films by direct nitridation of Al thin films in flowing NH3 gas

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 10:00 AM - 1:00 PM D7 (MK 3F-302)

12:00 PM - 12:15 PM

^○(M1)Shun Kajihara¹, Ryosuke Kagimasa¹, Yoshihiro Matsumoto¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

Keywords:AlN,薄膜,直接窒化