[18p-A12-1~17] 2.1 Radiation physics and detectors

[18p-A12-3] Threshold voltage changes of thick silicon oxide film by γ-ray irradiation

^○Katsumi Yoshizawa¹, Masashi Otsuka¹, Shutetsu Akiyama¹, Kunihisa Ishii¹, Jun Aizawa¹, Atsushi Watanabe², Tomonari Nakada², Koichi Mochiki³ (PioneerMTC¹, Pioneer², Tokyo City Univ³)

Keywords:放射線耐性,撮像素子