Low temperature crystallization of amorphous SiGe layer by Sn incorporation

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Sep 18, 2013 1:30 PM - 4:45 PM B4 (TC2 1F-106)

2:15 PM - 2:30 PM

^○Takashi Yamaha¹, Takamitsu Arahira¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya University¹, SPS²)

Keywords:SiGeSn,結晶成長