2:45 PM - 3:00 PM
[18p-B4-6] Characterization of Ge1-x-ySnxCy Layers Formed by useing Sputtering Deposition
Keywords:半導体,GeSnC,結晶成長
Oral presentation
15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals
Wed. Sep 18, 2013 1:30 PM - 4:45 PM B4 (TC2 1F-106)
2:45 PM - 3:00 PM
Keywords:半導体,GeSnC,結晶成長