Microstructure and magnetotransport characteristics of Fe3O4 (111) films obtained by post annealing in controlled atmosphere

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

Wed. Sep 18, 2013 2:00 PM - 7:00 PM D3 (MK 2F-201)

6:00 PM - 6:15 PM

^○Kosuke Matsuzaki¹, Leonardo Lari², Vlado Lazarov², Hideo Hosono¹, Tomofumi Susaki¹ (MSL, Tokyo Tech.¹, York Univ.²)

Keywords:Fe3O4,磁気抵抗,STEM