GaAs/AlAs Coupled Multilayer Cavity with InAs QDs Fabricated by Wafer-Bonding

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures

Wed. Sep 18, 2013 1:30 PM - 6:00 PM D6 (MK 3F-301)

5:00 PM - 5:15 PM

^○Chiho Harayama¹, Sho Katoh¹, Yoshinori Nakagawa^1,2, Ken Morita¹, Takahiro Kitada¹, Toshiro Isu¹ (Univ. of Tokushima¹, NICHIA Corp.²)

Keywords:結合共振器,ウエハ直接接合,InAs量子ドット