The 74th JSAP Autumn Meeting,2013

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Poster presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[18p-P9-1~10] 13.3 Insulator technology

Wed. Sep 18, 2013 1:30 PM - 3:30 PM P9 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

[18p-P9-8] Impact of Post-Metalization Annealing on Chemical Structure in Ge-MIS Capacitors with HfO2/TaGexOy Dielectrics

○Kuniaki Hashimoto1, Akio Ohta1, Hideki Murakami1, Seiichiro Higashi1, Seiichi Miyazaki2 (Grad. School of AdSM, Hiroshima Univ.1, Grad. School of Eng., Nagoya Univ.2)

Keywords:Ge,高誘電率絶縁膜