InGaN/GaN multi-quantum well growth by raised pressure MOVPE

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

11:45 AM - 12:00 PM

^○Tomohiro Doi¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

Keywords:InGaN