Fabrication of 1- or 2-monolayer-thick InN single quantum wells by intermittent supply of group-III source in selective-area MOVPE

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

11:00 AM - 11:15 AM

^○Tetsuya Akasaka¹, Andrew Berry¹, ChiaHung Lin¹, Hideki Yamamoto¹ (NTT BRL¹)

Keywords:InN,Step-free,quantum well