[19a-C15-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19a-C15-1] Fabrication of High Sensitive Magnetic Tunnel Junction Sensor Devices with Amorphous CoFeSiB Free Layer

^○Daiki Kato¹, Mikihiko Oogane¹, Kosuke Fujiwara¹, Takuo Nishikawa², Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹, Konica Minolta Inc.²)

Keywords:磁気センサ