The 74th JSAP Autumn Meeting,2013

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Poster presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19a-P3-1~27] 6.3 Oxide-based electronics

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P3 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

[19a-P3-1] Resistive Switching Device Consisting of 2-nm-thick Tantalum Oxide

○Takeo Ohno1, Seiji Samukawa1,2 (WPI-AIMR, Tohoku Univ.1, IFS, Tohoku Univ.2)

Keywords:ナノ薄膜,resistive memory,ReRAM