[19a-P3-1~27] 6.3 Oxide-based electronics

[19a-P3-22] Filament temperature dependence of swiching speed in transition-metal-oxide ReRAM

^○Ryosuke Koishi¹, Takumi Moriyama¹, Kouhei Kimura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Keywords:ReRAM,スイッチング速度,フィラメント温度