[19a-P4-1~2] 13.1 Basic properties and their evaluation

▲ [19a-P4-2] Study of carrier density depth profiling in highly-doped Ge using HREELS

^○sungjin park¹, noriyuki uchida¹, yoshihiko moriyama², tsutomu tezuka², tetsuya tada¹ (Nanoelectronics Research Institute, AIST¹, GNC, AIST²)

Keywords:HREELS,carrier density,Germanium