[19a-P7-1~14] 14.3 Electron devices and Process technology

△ [19a-P7-3] Mapping evaluation of n-GaN Schottky diodes using scanning internal photoemission microscopy

^○Shingo Yamamoto¹, Toshichika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima², Kenji Shiojima¹ (Univ. of Fukui¹, Hitachi Cable²)

Keywords:顕微光応答法,n-GaN,ショットキー