9:30 AM - 11:30 AM
[19a-P7-9] Potential characterization of the AlGaN/GaN HEMTs with Al2O3 and SiN passivation layers deposited by the ECR sputter
Keywords:GaN HEMT,ECRスパッタ,Al2O3
Poster presentation
14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology
Thu. Sep 19, 2013 9:30 AM - 11:30 AM P7 (Davis Memorial Auditorium)
9:30 AM - 11:30 AM
Keywords:GaN HEMT,ECRスパッタ,Al2O3