Luminescence characteristic of GaInAs QDs by intermittent supply of Ga using MOVPE

Presentation information

Poster presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P8 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Masayuki Yamauchi¹, Shohei Yoshikawa¹, Yuta Yamamoto¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

Keywords:量子ドット,GaInAs,MOVPE