RHEED Analysis for the formation process of  Nitrogen δ-doped layer on GaAs（001）(3)

Presentation information

Poster presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P8 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Norihisa Nishimoto¹, Masahiko Kondow¹, Fumitaro Ishikawa² (Osaka Univ.¹, Ehime Univ.²)

Keywords:希釈窒化物,デルタドープ