Junction capacitance of C<sub>60</sub> doped GaAs diodes grown by MBE

Presentation information

Poster presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P8 (Davis Memorial Auditorium)

9:30 AM - 11:30 AM

^○Jiro Nishinaga¹, Yoshiji Horikoshi¹ (Waseda Univ.¹)

Keywords:GaAs,フラーレン,MBE