[19a-P9-1~10] 15.6 IV-group-based compounds

[19a-P9-3] Analysis of dielectric breakdown path in SiC MOS capacitors

^○Soshi Sato¹, Yuki Hiroi³, Kikuo Yamabe³, Makoto Kitabatake⁴, Tetsuo Endo^1,2, Masaaki Niwa¹ (CIES, Tohoku Univ.¹, School of Eng., Tohoku Univ.², Ins. Appl. Phys., Univ. Tsukuba³, FUPET⁴)

Keywords:熱酸化,絶縁破壊