[19a-P9-1~10] 15.6 IV-group-based compounds

[19a-P9-6] Electrically Detected Magnetic Resonance Study on Hydrogen depassivation from C-face Interface Defects in 4H-SiC(000-1) Metal-Oxide-Semiconductor Field Effect Transistors

^○(M1)Ryo Arai¹, Takahide Umeda¹, Yoshihiro Satoh¹, Mitsuo Okamoto², Shinsuke Harada², Ryoji Kosugi², Hajime Okumura², Takahiro Makino³, Takeshi Ohshima³ (Univ. of Tsukuba¹, National Institute of Advanced Industrial Science and Technology (AIST)², Japan Atomic Energy Agency (JAEA)³)

Keywords:炭化ケイ素,ゲート酸化膜界面,電子スピン共鳴