[19p-C15-1~8] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19p-C15-8] Voltage-induced magnetic anisotropy change in MgO/FeB/MgO junction

^○Takayuki Nozaki^1,2, Kei Yakushiji^1,2, Shingo Tamaru¹, Rie Matsumoto^1,2, Makoto Konoto^1,2, Hitoshi Kubota^1,2, Akio Fukushima^1,2, Shinji Yuasa^1,2 (AIST¹, CREST-JST²)

Keywords:Magnetic tunnel junction,magnetic anisotropy