[19p-C8-1~18] 13.6 Silicon devices / Integration technology

△ [19p-C8-12] Low temperature formation of Ni-GaSb alloy Schottky junction for Metal Source/Drain of GaSb pMOSFET

^○Koichi Nishi¹, SangHyoen Kim¹, Masahumi Yokoyama¹, Haruki Yokoyama², Mituru Takenaka¹, Shinichi Takagi¹ (University of Tokyo¹, NTT Photonics Laboratories, NTT Corporation²)

Keywords:GaSb