The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[19p-C8-1~18] 13.6 Silicon devices / Integration technology

Thu. Sep 19, 2013 1:15 PM - 6:30 PM C8 (TC3 2F-201)

5:30 PM - 5:45 PM

[19p-C8-15] Effect of Ionization Energy Increase of Phosphorus Dopants in Nanwire Transistors’s Electrical characterizations

Yuya Kurosawa1,2, Naoya Kadotani1, Tunaki Takahashi2, Teruyuki Ohashi1, Shunri Oda3, Ken Uchida1,2 (Dept. Phys. Elec Tokyo Institute of Technology.1, Keio Univ.2, QNERC Tokyo Institute of Technology3)

Keywords:イオン化エネルギー,ナノワイヤトランジスタ