The 74th JSAP Autumn Meeting,2013

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13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[19p-C8-1~18] 13.6 Silicon devices / Integration technology

Thu. Sep 19, 2013 1:15 PM - 6:30 PM C8 (TC3 2F-201)

2:45 PM - 3:00 PM

[19p-C8-6] The characteristics of Excited states of double-gate Si single-electron transistor

○Isamu Yoshioka1, Takafumi Uchida1, Hikaru Satou1, Masashi Arita1, Satoshi Fujiwara2, Yasuo Takahashi1 (IST. Hokkaido Univ.1, NTT Basic Research Labs.2)

Keywords:単電子トランジスタ