MOCVD growth of high-hole-concentration InGaAsSb for low-turn-on-voltage DHBTs

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

1:00 PM - 1:15 PM

^○Takuya Hoshi¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Hideaki Matsuzaki¹, Masaki Kohtoku¹ (NTT Photonics Labs.¹)

Keywords:インジウムガリウム砒素アンチモン,有機金属化学気相堆積,ヘテロ接合バイポーラトランジスタ