The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[19p-D3-1~18] 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

5:00 PM - 5:15 PM

[19p-D3-16] Selective excitation PL properties of ultrahigh-density InAs QD on GaAsSb buffer layer

○Miyuki Shiokawa1, Koichi Yamaguchi1 (Univ. of Electro-Communications1)

Keywords:自己形成量子ドット,超高密度,GaAsSb