Formation of GaInAs quantum dots on GaP Substrate by MOCVD

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

5:30 PM - 5:45 PM

^○(M2)Fumiya Hoshino¹, Toshihiro Furukawa¹, Shohei Oshida¹, Tomoyuki Miyamoto¹ (Tokyo Tech¹)

Keywords:量子ドット,成長,MOCVD