EL properties of InGaAsN/GaAsSb quantum well diodes grown on InP substrates

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

1:30 PM - 1:45 PM

Toru Sahasi¹, ^○Yuichi Kawamura¹ (Osaka Prefecture University¹)

Keywords:InP,InGaAsN,MBE