Evaluation of N and As duration by Raman spevtroscopy in GaAsN thin film growth using the atomic layer epitaxy

Shoma Goto

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[19p-D3-1~18] 15.3 III-V-group epitaxial crystals

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D3 (MK 2F-201)

2:00 PM - 2:15 PM

△ [19p-D3-5] Evaluation of N and As duration by Raman spevtroscopy in GaAsN thin film growth using the atomic layer epitaxy

^○(M1)Shoma Goto¹, Koji Maeda¹, Tetsuo Ikari¹, Hidetoshi Suzuki², Toshihiro Yamauchi², Tomohiro Haraguchi¹ (Faculy of Engineering,Univ Miyazaki¹, IRO,Univ.Miyazaki²)

Keywords:半導体

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