[JSAP Paper Award Speech](30 min.)Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2A/mm

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

1:00 PM - 1:30 PM

^○Xiuju Zhou¹, Qiang Li¹, Chak Wah Tang¹, Kei May Lau¹ (HKUST¹)