The 74th JSAP Autumn Meeting,2013

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D7-1~17] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

4:00 PM - 4:15 PM

[19p-D7-11] Al2O3/ n-Ga2O3 MOS diode (2)

○Takafumi Kamimura1, Man Hoi Wong1, Kohei Sasaki2,1, Krishnamuruthy Daivasigamani1, Akito Kuramata2, Takekazu Masui3, Shigenobu Yamakoshi2, Masataka Higashiwaki1 (NICT1, Tamura Corp.2, Koha Co., Ltd.3)

Keywords:酸化ガリウム,Ga2O3,MOSFET