Application of super-higher-order nonlinear dielectric microscopy for power-device analysis: Cross-sectional imaging of SiC-MOSFET

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

5:00 PM - 5:15 PM

^○Norimichi Chinone¹, Takashi Nakamura², Yasuo Cho¹ (RIEC, Tohoku Univ.¹, ROHM Co., Ltd.²)

Keywords:SNDM,SiC-MOSFET