Comparative Study on III-V DG MOSFETs with Various Channel Materials

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

1:45 PM - 2:00 PM

^○Ryoko Ohama¹, Akio Nisida¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo University of Science¹)

Keywords:III-V MOSFET,DG MOSFET,量子補正モンテカルロシミュレーション