The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D7-1~17] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

2:45 PM - 3:00 PM

[19p-D7-7] Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InSb HEMTs taking into account the non-parabolicity of the conduction band

○(D)Yui Nishio1, Takahiro Tange1, Satou Takato1, Naomi Hirayama1, Tsutomu Iida1, Yoshifumi Takanashi1 (TUS1)

Keywords:HEMT,InSb,二次元電子ガス