Ohmic Contact Formation on β-Ga<sub>2</sub>O<sub>3</sub> Using Si Ion Implantation

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

3:15 PM - 3:30 PM

^○Kohei Sasaki^1,2, Masataka Higashiwaki², Akito Kuramata¹, Takekazu Masui³, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT², Koha Co., Ltd.³)

Keywords:酸化ガリウム,イオン注入,オーミックコンタクト